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Si4505DY
Vishay Siliconix
N- and P-Channel MOSFET
PRODUCT SUMMARY
FEATURES
N-Channel
P-Channel
V DS (V)
30
-8
R DS(on) ( Ω )
0.018 at V GS = 10 V
0.027 at V GS = 4.5 V
0.042 at V GS = - 4.5 V
0.060 at V GS = - 2.5 V
I D (A)
7.8
6.4
- 5.0
- 4.0
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Level Shift
? Load Switch
SO-8
S 1
G 1
S 2
G 2
1
2
3
4
8
7
6
5
D 1
D 1
D 2
D 2
D 1
G 2
S 2
G 1
Top View
Ordering Information: Si4505DY-T1 - E3 (Lead (Pb)-free)
Si4505DY-T1 -G E3 (Lead (Pb)-free and Halogen-free)
S 1
D 2
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
30
± 20
10 s
Steady State
-8
±8
Unit
V
Continuous Drain Current (T J = 150 °C) a, b
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
7.8
6.0
30
6.0
5.2
- 5.0
- 3.6
- 30
- 3.8
- 3.0
A
Continuous Source Current (Diode Conduction) a, b
I S
1.8
1.0
- 1.8
- 1.0
Maximum Power Dissipation a, b
T A = 25 °C
T A = 70 °C
P D
2
1.3
1.20
0.75
2
1.3
1.2
0.75
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJF
50
85
30
62.5
105
40
50
85
30
62.5
105
40
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 71826
S09-0868-Rev. C, 18-May-09
www.vishay.com
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